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SMD Type
Transistors
Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Wide area of safe operation.
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage 2SD1251 2SD1251A Collector-emitter voltage 2SD1251 2SD1251A Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg VEBO IC ICP IB PC VCEO Symbol VCBO Rating 60 80 60 80 8 4 6 1 1.3 30 150 -55 to +150 Unit V V V V V A A A W W
3.80
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1
SMD Type
2SD1251,2SD1251A
Electrical Characteristics Ta = 25
Parameter Collector-base cutoff current Emitter-base cutoff current Collector to emitter voltage 2SD1251 2SD1251A Forward current transfer ratio Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Transition frequency VBE hFE VCE = 3 V, IC = 1 A VCE = 3 V, IC = 0.1 A VCE = 3 V, IC = 1 A Symbol ICBO IEBO Testconditons VCB = 20 V, IE = 0 VEB = 8 V, IC = 0
Transistors
Min
Typ
Max 30 1
Unit iA mA
VCEO(sus) IC = 0.25 A, L = 25 mH
60 80 30 40 1.2 1 1 V V MHz 160
VCE(sat) IC = 2 A, IB = 0.4 A fT VCE = 10 V, IC = 0.2 A, f = 0.5 MHz
hFE Classification
Rank hFE Q 30 60 P 50 100 O 80 160
2
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